Structure, Optical and Electrical Properties of Nb(Zn) Doped Sol-Gel ITO Films: Effect of Substrates and Dopants

Abstract

We present comparative studies of sol-gel ITO multilayered films undoped and doped with Nb or Zn (4 at.%). The films were obtained by successive depositions of five layers using the dip-coating sol-gel method on microscopic glass, SiO2/glass, and Si substrates. The influence of the type of substrates and dopant atoms on the structure and optical properties of the sol-gel ITO thin films is examined and discussed in detail. XRD patterns of these layers showed a polycrystalline structure with an average crystallite size of <11 nm. Raman spectroscopy confirmed the chemical bonding of dopants with oxygen and showed the absence of crystallized Nb(Zn)-oxide particles, indicated by the XRD pattern. Spectroscopic Ellipsometry and AFM imaging revealed a clear dependence of the optical parameters and surface morphology of the ITO and ITO:Nb(Zn) thin films on the type of substrates and dopants. The analysis of the current-voltage and capacitance-voltage characteristics of the Al/ITO/Si structures revealed the presence of charge carrier traps in the ITO bulk and the ITO-Si interface. The densities of these traps are obtained and the character of the current transport mechanism is established.